2006. 2. 16 1/3 semiconductor technical data kta1517 epitaxial planar pnp transistor revision no : 0 low noise amplifier application. features high voltage : v ceo =-120v. excellent h fe linearity : h fe (0.1ma)/h fe (2ma)=0.95(typ.). high h fe : h fe =200 700. low noise : nf=1db(typ.), 10db(max.). complementary to ktc3911s. maximum rating (ta=25 ) dim millimeters 1. emitter 2. base 3. collector sot-23 a b c d e 2.93 0.20 1.30+0.20/-0.15 0.45+0.15/-0.05 2.40+0.30/-0.20 g 1.90 h j k l m n 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 min 1.00+0.20/-0.10 m j k e 1 2 3 h g a n c b d 1.30 max ll pp p7 + _ electrical characteristics (ta=25 ) note : h fe classification gr(g):200 400 bl(l):350 700 h rank type name marking lot no. ac fe characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =-120v, i e =0 - - -0.1 a emitter cut-off current i ebo v eb =-5v, i c =0 - - -0.1 a dc current gain h fe (note) v ce =-6v, i c =-2ma 200 - 700 collector-emitter saturation voltage v ce(sat) i c =-10ma, i b =-1ma - - -0.3 v transition frequency f t v ce =-6v, i c =-1ma - 100 - mhz collector output capacitance c ob v cb =-10v, i e =0, f=1mhz - 4.0 - pf noise figure nf v ce =-6v, i c =-0.1ma f=1khz, rg=10k - 1.0 10 db characteristic symbol rating unit collector-base voltage v cbo -120 v collector-emitter voltage v ceo -120 v emitter-base voltage v ebo -5 v collector current i c -100 ma base current i b -20 ma collector power dissipation p c 150 mw junction temperature t j 150 storage temperature range t stg -55 150
2006. 2. 16 2/3 kta1517 revision no : 0 collector current i (ma) 0 0 base-emitter voltage v (v) be c i - v i - v c ce ce collector-emitter voltage v (v) 0 c collector current i (ma) -2 -4 -6 -8 -10 0 -1 -2 -3 -4 -5 -0.2 -0.4 -0.6 -0.8 -1.0 -5 -15 -20 -30 -10 -25 collector current i (ma) 100 -0.1 -0.3 300 500 1k 3k 5k dc current gain h fe common emitter -1 -3 -10 c ta=100 c ta=25 c ta=-25 c v =-6v ta=25 c ce -50 -30 h - i fe c emitter current i ( a) common emitter v =-6v f=270hz 3k h (x10 ) h ( x ) fe 1 30 100 h paramemter 30 3 5 10 100 50 1k 300 500 ie r e h 300 1k e ta=25 c -5 h ( xk ? ) ie ce h parameter - i 10k e i =-1 a b 0 -2 -3 -4 -5 -6 -7 -8 -9 -10 common emitter ta=25 c be c ta=100 c ta=25 c ta=-25 c collector-emitter collector current i (ma) -0.1 -0.05 -0.03 -0.1 -0.01 -0.3 -1 -3 -10 c -50 -30 -0.5 -0.3 ce common emitter v - i ce(sat) c ta=25 c i /i =10 c common emitter v =-6v ta=25 c ce saturation voltage v (v) b ?
2006. 2. 16 3/3 kta1517 revision no : 0 h (x10 ) re -5 c - v ob cb cb collector-base voltage v (v) -1 ob 1 collector output capacitance c (pf) 10 10 signal source resistance r ( ? ) g 100 -10 collector current i ( a) c g , nf - r i c -100 -1k -10k 1k 10k 100k common emitter v =-6v f=1khz ce nf=1db 2 3 4 6 8 10 12 nf=1d b 2 3 4 6 8 10 12 -3 -10 -30 -100 -200 3 5 20 i =0 f=1mhz ta=25 c e h parameter - v ce ce collector-emitter voltage v (v) -1 5 h parameter 10 nf - r , i c g c collector current i ( a) -10 100 g signal source resistance r ( ? ) 10 -100 -1000 -10000 1k 10k 100k v =-6v ce f=10hz nf=1 db 2 3 4 6 8 12 12 10 10 -3 -5 -10 -30 -50 -100 30 50 100 300 500 700 common emitter i =1ma f=270hz ta=25 c e fe h oe h (x ) h (x k ? ) ie collector power dissipation p (mw) ambient temperature ta ( c) 0 0 50 100 25 50 75 125 100 c 150 200 p - ta c common emitter 150 ?
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